Capacitor for a semiconductor device and manufacturing method thereof

ABSTRACT

Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application claims the benefit of Korean Patent Application No.10-2004-111387 filed Dec. 23, 2004, the entire contents of which arehereby incorporated by reference for all purposes.

FIELD OF THE INVENTION

The present invention relates to a capacitor for a semiconductor deviceand a manufacturing method thereof, and more particularly, to acapacitor for a semiconductor device, which has a low leakage currentcharacteristic and a high capacitance, and a manufacturing methodthereof.

BACKGROUND OF THE INVENTION

Generally, a capacitor for a semiconductor device should have acapacitance higher than a predetermined level, and for the purpose ofincreasing the refresh time of a semiconductor device, especially, aDRAM or the like, continuous research and development have been carriedout so as to have a lower leakage current characteristic.

Meanwhile, with the high integration of a semiconductor device, thesurface area occupied by each region of the semiconductor devicedecreases gradually. As such, the surface area for forming a capacitorin the semiconductor device also decreases, which makes it uneasy toobtain sufficient capacitance and low leakage current characteristics.

Hereinafter, the problems of a capacitor for a semiconductor device anda manufacturing method thereof in the prior art will be described inmore detail with reference to the accompanying drawings.

FIGS. 1 a to 1 g are cross sectional views of a conventionalmanufacturing process of a capacitor. Referring to these drawings, theprior art problems of a capacitor for a semiconductor device and amanufacturing method thereof will be described below.

Firstly, as shown in FIG. 1 a, a structure of bit line electrodes 2 andthe like is formed over a predetermined lower structure 1 formed on asemiconductor substrate (not shown) in which active regions are definedby a device isolation film (not shown).

Continually, as shown in FIG. 1 b, an interlayer insulating film 3 madeof an oxide film or the like is deposited on the entire surface of thetop part of the above structure, and a nitride film 4 is deposited as abarrier layer on the interlayer insulating film 3.

Then, as shown in FIG. 1 c, the nitride film 4 and the interlayerinsulating film 3 are etched by a photoetching process to thus form acontact hole. The contact hole exposes the surface of the lowerstructure 1, especially the surface of a plug (not shown) connected to ajunction of the semiconductor substrate (not shown) corresponding to astorage node located between the bitline electrodes 2.

Continually, as shown in FIG. 1 d, a conductive polycrystalline siliconis deposited over the entire surface of the resultant material, so thatthe contact hole may be buried by the polycrystalline silicon. Then, aplanarization process is performed on the resultant material until thenitride film 4 is exposed, to thus form a contact plug 5 within thecontact hole.

Next, as shown in FIG. 1 e, an oxide film 6 is deposited on the entiresurface of the top part of the structure, and thereafter a predeterminedregion of the oxide film 6 is etched through a photoetching process, tothus expose the top part of the contact plug 5 and a predeterminedregion of the nitride film 4 in the peripheral part thereof. The regionwhere the oxide film 6 is to be etched is directly related with thesurface area of a lower electrode of a capacitor to be formed later, andis set as wide as possible, considering the clearance distance from thecapacitor of an adjacent cell.

Continually, a polysilicon film is deposited over the entire surface ofthe resultant material, and thereafter the portion deposited on theoxide film 6 is removed from the deposited polysilicon film by chemicalmechanical planarization (CMP) or the like. Then, the remaining oxide 6portion is selectively etched and removed, to thus form a capacitorlower electrode 7 as shown in FIG. 1 f.

Next, as shown in FIG. 1 g, a dielectric film 8 is deposited on the toppart of the structure. As the dielectric film, a multilayered oxidefilm-nitride film-oxide film is formed (i.e., an ONO film). Then, acapacitor upper electrode 9 is formed on the resultant material, therebycompleting the manufacturing of the capacitor.

However, the capacitor structure including the dielectric film 8 using aprior art single ONO film cannot satisfy both the sufficient capacitanceand low leakage current characteristic.

Accordingly, a dielectric film formed of AlON (aluminum oxynitride) hasbeen used so as to improve the leakage current characteristic. In thiscase, however, although the interface characteristics are excellent andthus the leakage current characteristics are good, recent needs forcapacitors demanding a high capacitance cannot be met due to a lowcapacitance characteristic.

In this way, as the integration degree of semiconductor devices isincreased, capacitors utilizing a single dielectric film cannot satisfyboth the capacitance and leakage current characteristics that thecapacitors should have.

BRIEF SUMMARY OF THE INVENTION

It is an object of the present invention to provide a capacitor for asemiconductor device, which has a low leakage current characteristic anda high capacitance even on a small mounting surface area, and amanufacturing method thereof.

To achieve the above object of the present invention, there is provideda capacitor for a semiconductor device, comprising a lower electrodeformed over a predetermined lower structure on a semiconductorsubstrate; a first dielectric film formed over the lower electrode andhaving a low leakage current characteristic; a second dielectric filmformed over the first dielectric film and having a relatively higherdielectric constant than the first dielectric film; and an upperelectrode formed over the second dielectric film.

The first dielectric film is an AlON (aluminum oxynitride) film,preferably, the thickness of which is 50 to 150 Å.

The second dielectric film is a YON (yttrium oxynitride) film,preferably, the thickness of which is less than 10 Å.

Preferably, the lower electrode has a dual structure of a doped siliconfilm and an undoped silicon film and a TiN layer, as a barrier layer, isincluded between the second dielectric film and the upper electrode.

Additionally, there is provided a manufacturing method of a capacitorfor a semiconductor device, comprising the steps of forming a lowerelectrode over a predetermined lower structure on a semiconductorsubstrate; forming a first dielectric film having a low leakage currentcharacteristic over the lower electrode; forming a second dielectricfilm having a higher dielectric constant than the first dielectric filmover the first dielectric film; and forming an upper electrode over thesecond dielectric film.

The first dielectric film is an AlON (aluminum oxynitride) film,preferably, the thickness of which is 50 to 150 Å.

The AlON film can be deposited by PECVD (plasma-enhanced CVD) method,wherein (CH₃)₃AL is used as a source material, and H₂O and NH₃ are usedas reaction material during deposition of Al₂O₃.

Preferably, the temperature of a wafer is 200 to 450° C. and thepressure of a reaction furnace during deposition is 0.1 to 1.0 torr, andthe use amount of H₂O is 10 to 500 sccm and the use amount of NH₃ is 10to 500 sccm.

Preferably, the manufacturing method of the present invention furthercomprises the step of carrying out N₂O plasma annealing after theformation of the AlON film in order to increase the N₂ content of theAlON film.

The second dielectric film is a YON film, preferably, the thickness ofwhich is less than 10 Å. The YON film can be formed by ALD (atomic layerdeposition) method.

Preferably, in the deposition using the ALD, yttrium gas as a source gasis injected into a reactor alternately with NH₃ gas and H₂O gas as areaction material and inactive gas is provided between the injection ofyttrium gas and NH₃/H₂O gas.

Preferably, the injection time of yttrium gas, the injection time ofNH₃/H₂O gas and the injection time of inactive gas are 0.1 to 10seconds, respectively, the amount of NH₃ is 10 to 100 sccm, the amountof H₂O is 10 to 100 sccm, and the temperature of the reactor ismaintained at 250 to 350° C.

Preferably, the YON film can be formed by ICE (ionized cluster beam)deposition.

Preferably, the method of the present invention further comprise thestep of carrying out N₂O plasma annealing after the formation of the YONfilm in order to increase the N₂ content of the YON film.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIGS. 1 a to 1 g are cross sectional views of a conventionalmanufacturing process of a capacitor; and

FIGS. 2 a to 2 h are cross sectional views for explaining amanufacturing process of a capacitor for a semiconductor according toone embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described in more detail by referringto embodiments of the invention. The embodiments given are only forillustrating the present invention, and not for giving any limitation tothe scope of the present invention.

FIGS. 2 a to 2 h are cross sectional views for explaining amanufacturing process of a capacitor for a semiconductor according toone embodiment of the present invention. Referring to this, the presentinvention will be described below.

Firstly, as shown in FIG. 2 a, a structure of bit line electrodes 102and the like is formed over a predetermined lower structure 101 formedon a semiconductor substrate (not shown) in which active regions areformed by a device isolation film (not shown). Continually, aninterlayer insulating film 103 made of an oxide film or the like isdeposited on the entire surface of the resultant material, and a nitridefilm 104 is deposited as a barrier layer on the interlayer insulatingfilm 103.

Then, as shown in FIG. 2 b, the nitride film 104 and the interlayerinsulating film 103 are etched by a photoetching process to thus form acontact hole. The contact hole A exposes the surface of the lowerstructure 101, especially the surface of a plug (not shown) connected toa junction of the semiconductor substrate (not shown) corresponding to astorage node located between the bitline electrodes 102.

Continually, as shown in FIG. 2 c, a conductive polycrystalline siliconis deposited over the entire surface of the resultant material, so thatthe contact hole A may be buried by the polycrystalline silicon. Then, aplanarization process is performed on the resultant material until thenitride film 104 is exposed, to thus form a contact plug 105 within thecontact hole A.

Next, as shown in FIG. 2 d, an oxide film 106 is deposited on the entiresurface of the top part of the structure, and thereafter a predeterminedregion of the oxide film 106 is etched through a photoetching process,to thus expose the top part of the contact plug 105 and a predeterminedregion of the nitride film 104 in the peripheral part thereof. Theregion where the oxide film 106 is to be etched is directly related withthe surface area of a lower electrode of a capacitor to be formed later,and is set as wide as possible, considering the clearance distance fromthe capacitor of an adjacent cell. The oxide film 106 is deposited at athickness of 5000 to 20000 Å.

Continually, a polysilicon film is deposited over the entire surface ofthe resultant material, and thereafter the portion deposited on theoxide film 106 is removed from the deposited polysilicon film bychemical mechanical planarization (CMP) or the like. Then, the remainingoxide 106 portion is selectively etched and removed, to thus form acapacitor lower electrode 107 as shown in FIG. 2 e. The polysilicon filmused as the capacitor lower electrode 107 is formed by two deposit stepsof depositing a doped silicon film at 100 to 300 Å and then deposit anundoped silicon film at 100 to 500 Å under a temperature of 500 to 560°C., especially, 530° C., and a pressure of 0.5 to 1.0 torr. Whendepositing the doped silicon film, 800 to 1200 sccm of SiH₄ and 150 to250 sccm of PH₃ are used, while depositing the undoped silicon film, 800to 1200 sccm of SiH₄ and 0 sccm of PH₃ are used.

Next, as shown in FIG. 2 f, an AlON (aluminum oxynitride) film 108having a dense film material and causing a lower leakage current isdeposited on the top part of the resultant material. Since the AlON film108 exhibits excellent interface characteristics due to its dense filmmaterial, it serves to suppress the formation of an interfacial filmbetween it and the lower electrode 107 to thus suppress leakage current.At this time, the AlON film 108 is deposited using PECVD(plasma-enhanced CVD). When depositing, using the PECVD method, thetemperature of a wafer is 200 to 450° C., the pressure of a reactionfurnace during deposition is 0.1 to 1.0 torr, and (CH₃)₃AL is used assource material. While depositing, when Al₂O₃, H₂O and NH₃ are used asthe reaction material. The amount of H₂O used is 10 to 500 sccm, and theamount of NH₃ used is 10 to 500 sccm. The thickness of the AlON film 108to be deposited is 50 to 150 Å, and the RF power during deposition is 10to 500 watts. This film thickness is set considering the dielectricconstant and leakage current prevention characteristic of the entiredielectric film. If less than this range, the leakage current preventioncharacteristic is degraded, while if greater than this range, thedielectric constant is degraded, thereby failing to exhibit sufficientcapacitance.

Continually, an annealing process is performed on the resultant materialhaving the AlON film 108 formed thereto. In this annealing process, aN₂O plasma annealing is carried out in order to increase the N₂ contentof the AlON film 108. At this time, in case of rapid thermal annealing,the amount of N₂O gas is 1 to 10 slm, the temperature is kept between700 to 850° C., and the duration time is 60 to 180 seconds. As such, ifthe content of N₂ increases, the dielectric constant also increases andthe film material becomes denser.

Next, as shown in FIG. 2 g, a YON film (yttrium oxynitride) 109 having ahigh dielectric constant is deposited on the top part of the AlON film108. Since the YON film 109 has a dielectric constant of approximately25 and thus has a high capacitance, it allows the manufacture of ahigh-capacity capacitor. At this point, the YON film 109 is formed byALD (atomic layer deposition), that is, the YON film is deposited withina thickness of 10 Å by injecting yttrium gas, a source gas, into areactor alternately with NH₃ gas and H₂O gas, reaction material. Aninert gas, such as N₂, Ar, He, etc., is provided between the injectionof yttrium gas and NH₃/H₂O gas so that no residuals of each material areleft.

In the deposition using the ALD, a thin film less than 1 Å is depositedper cycle, one cycle consisting of a source gas injection, inactive gasinjection, and NH₃/H₂O gas injection, and a YON film 109 is formed at atotal thickness of 10 Å by repeating the above cycle. The injection timeof each reaction material and the injection time of inactive gas are 0.1to 10 seconds, respectively. And, the amount of NH₃ as a reaction gas is10 to 100 sccm, the amount of H₂O is 10 to 100 sccm, and the temperatureof the reactor is kept from 250 to 350° C. The thin film continuouslydeposited by repeating the above cycle is annealed at a low temperatureunder the temperature of 400 to 550° C. so as to be transformed into asingle film.

In the formation of the YON film 109, ICE (ionized cluster beam)deposition may be employed.

As seen above, in the present invention, leakage currents of a capacitorcan be decreased and capacitance can be greatly increased by forming adielectric film of a dual layer structure by first forming an AlON film108 on a lower electrode of the capacitor and then forming a YON film109 thereon. In other words, since the AlON film 108 first formed on thelower electrode exhibits excellent interface characteristics due to itsdense film material, it suppresses the formation of an interfacial filmbetween it and the lower electrode 107 to thus suppress leakage current.Besides, since the YON film 109 formed on the AlON film 108 has anextremely high dielectric constant of approximately 25, it can greatlyincrease the capacitance of the capacitor. Therefore, the manufacturingmethod for a capacitor according to the present invention can sharplydecrease the leakage current of the capacitor and greatly increase thecapacitance thereof by using a dielectric film with a dual structure ofan AlON film 108 and a YON film 109.

Furthermore, in the case that the YON film is used as a singledielectric film by being deposited on the lower electrode, this maycause an interfacial reaction between the polysilicon of the lowerelectrode and the YON film to produce SiO₂ having a low dielectricconstant, thereby degrading the YON film in terms of quality. In thepresent invention, an AlON film 108, whose film material is dense, isformed before forming a YON film 109, thereby suppressing the formationof an interface film between the YON film and the lower electrode andthus suppressing the quality degradation of the YON film 109.

Continually, a N₂O plasma annealing is carried out on the resultantmaterial in order to increase the N₂ content of the YON film 109. Atthis time, in case of rapid thermal annealing, the amount of N₂O gas is1 to 10 slm, the temperature is kept between 700 to 850° C., and theduration time is 60 to 180 seconds. As such, if the content of N₂increases, the dielectric constant also increases and the film materialbecomes denser.

Next, in order to remove impurities in the AlON film 108 and YON film109 and maintain the increased N₂ content, furnace vacuum N₂ annealingis performed. In the furnace vacuum N₂ annealing, the temperature iskept between 500 to 650° C., and the duration time is 5 to 60 minutes.Alternatively, a rapid thermal processing (RTP) may be performed insteadof the furnace vacuum N₂ annealing.

Continually, as shown in FIG. 2 h, a TiN layer is deposited as a barrierlayer 110 on the entire surface of the above structure, and polysiliconis deposited on the top thereof, thereby manufacturing a capacitor upperelectrode 111.

The capacitor formed as above may be used as a cell capacitor of a DRAM,as well as a capacitor device in various fields of semiconductordevices.

As described above, according to the present invention, it is possibleto obtain a capacitor having a high capacitance and a low leakagecurrent characteristics, even if the surface area of the capacitor isdecreased as the integration degree of the semiconductor device isincreased, by using a bi-layered film of an AlON film characteristic oflow leakage current and a YON film characteristic of high capacitance asa dielectric film of the capacitor.

Moreover, the present invention allows for the manufacture of acapacitor having a higher capacitance and lower leakage currentcharacteristics by improving the film material of the dielectric film orthe like and increasing the capacitance through an additional process ofincreasing the content of nitrogen in an AlON film having a low leakagecurrent characteristic and a YON film having a high capacitancecharacteristic, respectively.

1. A manufacturing method of a capacitor for a semiconductor device,comprising the steps of: forming a lower electrode over a predeterminedlower structure on a semiconductor substrate; forming an aluminumoxynitride film having a low leakage current characteristic over thelower electrode; forming a yttrium oxynitride film having a relativelyhigher dielectric constant than the aluminum oxynitride film over thealuminum oxynitride film; and forming an upper electrode over theyttrium oxynitride film.
 2. The method of claim 1, wherein the thicknessof the aluminum oxynitride film is 50 to 15 Å.
 3. The method of claim 1,wherein the aluminum oxynitride film is deposited by usingplasma-enhanced chemical vapor deposition.
 4. The method of claim 3,(CH₃)₃Al is used as source material, and H₂O and NH₃ are used asreaction material while Al₂O₃ is deposited.
 5. The method of claim 4,wherein the temperature of a wafer is 200 to 450 ÿ and the pressure of areaction furnace during deposition is 0.1 to 1.0 torr, and the amount ofH₂O used is 10 to 500 sccm and the amount of NH₃ used is 10 to 500 sccm.6. The method of claim 1, further comprising the step of carrying outN₂O plasma annealing after forming the aluminum oxynitride film in orderto increase the N₂ content of the aluminum oxynitride film.
 7. Themethod of claim 1, wherein the thickness of the yttrium oxynitride filmis less than 10 Å.
 8. The method of claim 1, wherein the yttriumoxynitride film is formed using atomic layer deposition.
 9. The methodof claim 8, wherein yttrium gas as a source gas is injected into areactor alternately with NH₃ gas and H₂O gas as reaction material and aninactive gas is provided between the injection of yttrium gas andNH₃/H₂O gas.
 10. The method of claim 9, wherein the injection time ofyttrium gas, the injection time of NH₃/H₂O gas and the injection time ofinactive gas are 0.1 to 10 seconds, respectively, the amount of NH₃ is10 to 100 sccm, the amount of H₂O is 10 to 100 sccm, and the temperatureof the reactor is kept between 250 to 350 ÿ.
 11. The method of claim 1,wherein the yttrium oxynitride film is formed using ionized cluster beamdeposition.
 12. The method of claim 1, further comprising the step ofcarrying out N₂O plasma annealing after forming the yttrium oxynitridefilm in order to increase the N₂ content of the yttrium oxynitride film.13. The method of claim 12, further comprising the step of carrying outfurnace vacuum N₂ annealing or rapid thermal processing (RTP) after theN₂O plasma annealing.
 14. The method of claim 1, further comprising thestep of depositing a titanium nitride layer as a barrier layer afterforming the yttrium oxynitride film.